Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
2N7002W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
60
–
–
–
–
–
–
–
–
–
–
1.0
500
100
–100
Vdc
µAdc
nAdc
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
On–State Drain Current
(VDS
≥
2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
Forward Transconductance
(VDS
≥
2.0 VDS(on), ID = 200 mAdc)
VGS(th)
ID(on)
VDS(on)
–
–
rDS(on)
–
–
–
–
gFS
80
–
–
–
–
–
7.5
13.5
7.5
13.5
–
mmhos
–
–
3.75
0.375
Ohms
1.0
500
–
–
2.5
–
Vdc
mA
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
–
–
–
–
–
–
50
25
5.0
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 25 Vdc, ID
^
500 mAdc,
RG = 25
Ω,
RL = 50
Ω,
Vgen = 10 V)
td(on)
td(off)
–
–
–
–
20
40
ns
ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
VSD
IS
ISM
–
–
–
–
–
–
–1.5
–115
–800
Vdc
mAdc
mAdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2005 Rev. A
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
