2N6716 / 2N6717 / 2N6718
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
1A , 100V
NPN Plastic Encapsulated Transistor
FEATURES
TO-92
G
H
High Voltage：V
CEO
= 100V
Gain of 20 @ I
C
= 0.5A
J
A
D
B
K
Emitter
Base
Collector
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Base
E
C
F
Emitter
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
2N6716
2N6717
2N6718
2N6716
2N6717
2N6718
Symbol
V
CBO
Rating
60
80
100
60
80
100
5
1
1
150, -55~150
Unit
V
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
2N6716
2N6717
2N6718
2N6716
Collector to Emitter
2N6717
Breakdown Voltage
2N6718
Emitter to Base Breakdown Voltage
2N6716
Collector Cut-Off Current
2N6717
2N6718
2N6716
Emitter Cut-Off Current
2N6717
2N6718
Collector to Base
Breakdown Voltage
DC Current Gain
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
Min.
60
80
100
60
80
100
5
-
-
-
-
-
-
80
50
20
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
-
1
Unit
V
Test Conditions
I
C
=100μA, I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
V
V
μA
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=250mA
V
CE
=1V, I
C
=500mA
Any changes of specification will not be informed individually.
I
EBO
h
FE (1)
*
h
FE (2)
*
h
FE (3)
*
1
-
250
-
μA
18-Jan-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
