2N5832
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
FEATURES
General Purpose Switching Transistor
TO-92
G
H
J
A
D
B
K
REF.
A
B
C
D
E
F
G
H
J
K
Collector
Base
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
160
140
5
0.6
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Collector output capacitance
Transition frequency
.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
C
ob
f
T
Min
160
140
5
-
-
175
-
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.05
0.05
500
0.25
1
0.8
4
-
Unit
V
V
V
μA
μA
V
V
V
pF
MHz
Test Condition
I
C
= 0.1mA, I
E
= 0A
I
C
= 1mA, I
B
= 0A
I
E
= 0.01mA, I
C
= 0A
V
CB
= 120V, I
E
= 0 A
V
EB
= 4V, I
C
=0 mA
V
CE
= 5V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 5V, I
C
= 1mA
V
CB
= 10V, I
E
= 0 mA, f=1MHz
V
CE
= 10V, I
C
= 1mA , f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
