2N5401
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.6 A, -160 V
PNP Plastic Encapsulated Transistor
FEATURES
Switching and amplification in high voltage
Applications such as telephony
J
G
H
TO-92
Low current (max. 600mA)
High voltage (max. 160V)
K
A
B
D
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Collector
3
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATING
-160
-150
-5
-0.6
0.625
150, -55~150
UNIT
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
MIN
-160
-150
-5
-
-
80
60
50
-
-
100
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-50
-50
-
240
-
-0.5
-1
300
UNIT
V
V
V
nA
nA
TEST CONDITION
I
C
=-100µA, I
E
= 0A
I
C
=-1mA, I
B
= 0A
I
E
=-10µA, I
C
= 0A
V
CB
=-120 V, I
E
= 0 A
V
EB
=-3 V, I
C
= 0 A
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
V
V
MHz
I
C
=-50mA, I
B
=-5mA
I
C
=-50mA, I
B
=-5mA
V
CE
= -5V, I
C
= -10mA, f=30MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
4-Feb-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
