2N4126
Elektronische Bauelemente
-0.2 A, -25 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
PNP Silicon Epitaxial Transistor for Switching and Amplifier
Applications.
Complementary of the 2N4124
TO-92
G
H
Emitter
Base
Collector
J
A
D
B
K
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
E
C
F
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-25
-25
-4
-0.2
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter
Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector output Capacitance
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
*
h
FE (2)
*
V
CE(sat)
*
V
BE(sat)
*
C
ob
f
T
Min
-25
-25
-4
-
-
120
60
-
-
-
250
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-50
-50
360
-
-0.4
-0.95
4.5
-
Unit
V
V
V
nA
nA
Test Condition
I
C
= -0.01mA, I
E
= 0A
I
C
=-1mA, I
B
= 0A
I
E
= -0.01mA, I
C
= 0A
V
CB
=- 20V, I
E
= 0 A
V
EB
= -3V, I
C
= 0 mA
V
CE
= -1V, I
C
= -2 mA
V
CE
= -1V, I
C
=-50mA
I
C
=-50mA, I
B
=-5mA
I
C
=-50mA, I
B
=-5mA
V
CB
= -5V, I
E
= 0A, f=1MHz
V
CE
= -20V, I
C
= -10mA,
f=100MHz
V
V
pF
MHz
*
Pulse test：pulse width
≦
300s, duty cycle
≦
1.5%
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
