2N3904
Elektronische Bauelemente
0.2A, 60V
NPN General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power Dissipation P
CM
: 625mW (Ta=25°C)
Collector Current I
CM
: 200mA
Collector – Base Voltage V
(BR)CBO
: 60V
G
H
TO-92
1
Emitter
2
Base
3
Collector
J
A
D
B
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
2N3904-O
100~200
2N3904-Y
200~300
2N3904-G
300~400
E
K
C
F
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current -Continuous
Cpllector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
40
6
0.2
625
+150, -55 ~ +150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Min.
60
40
6
-
-
100
60
-
-
300
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
400
-
0.3
0.95
-
Unit
V
V
V
Test Conditions
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=40V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
µ
A
µ
A
µ
A
V
V
MHz
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev.B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
