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2N2222A 参数 Datasheet PDF下载

2N2222A图片预览
型号: 2N2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑料封装晶体管 [NPN Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管开关PC
文件页数/大小: 3 页 / 1397 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2N2222A的Datasheet PDF文件第2页浏览型号2N2222A的Datasheet PDF文件第3页  
2N2222A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
NPN Plastic Encapsulated Transistor
FEATURE
Complementary PNP type available 2N2907A
G
H
TO-92
1
Emitter
2
Base
3
Collector
Collector
3
J
A
B
REF.
D
PACKAGING INFORMATION
Weight: 0.2056 g
2
Base
K
1
Emitter
E
C
F
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(at T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
75
40
6
600
625
+150, -55 ~ +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)*
V
CE(sat)(1) *
V
CE(sat)(2) *
V
BE(sat) *
t
d
t
r
t
s
t
f
f
T
Min.
75
40
6
-
-
-
100
40
42
-
-
-
-
-
-
-
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
100
300
-
-
0.6
0.3
1.2
10
25
225
60
-
Unit
V
V
V
nA
nA
nA
Test Conditions
I
C
= 10uA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 60V, V
EB(Off)
= 3V
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 500mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Delay Time
Rise Time
Storage Time
Fall Time
Transition Frequency
V
V
V
nS
nS
nS
nS
MHz
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CC
= 30V, V
EB(Off)
= -0.5V, I
C
= 150mA,
I
B1
= 15mA
V
CC
= 30V, Ic = 150mA,
I
B1
= I
B2
= 15mA
V
CE
= 20V, I
C
= 20mA, f = 100MHz
* Pulse Test
CLASSIFICATION OF h
FE(1)
Rank
Range
01-June-2005 Rev. B
L
100 - 200
H
200 - 300
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