SS648
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
−
−
−
−
Micropower consumption for battery powered applications
Omnipolar, output switches with absolute value of North or South pole from magnet
Operation down to 2.5V
High sensitivity for direct reed switch replacement applications
Applications
−
−
−
−
Solid state switch
Handheld Wireless Handset Awake Switch
Lid close sensor for battery powered devices
Magnet proximity sensor for reed switch replacement in low duty cycle applications
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS648 Omnipolar Hall effect sensor IC is fabri-
cated from mixed signal CMOS technology .It incor-
porates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. If the flux density
is above or below the Bop/Brp thresholds then the
output transistor is driven to change states according-
ly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS648 will be latched on
(Bop) in the presence of a sufficiently strong South or
North magnetic field facing the marked side of the
package. The output will be latched off (Brp) in the
absence of a magnetic field.
1
V3.1 Nov 1, 2013
SECELECTRONICS [ SEC Electronics Inc. ]
