SS2309
Hall Latch - High Sensitivity
Output Behavior versus Magnetic Pole
DC Operating Parameters TA = -40°C to 150°C, VDD = 3.5 to 24V (unless otherwise specified)
Test Conditions (UA) Test Conditions (SO)
OUT
High
Low
B < BRP
B > BOP
B > BRP
B < BOP
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be turned on(drops low) in the presence of a
sufficiently strong North pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently
strong South pole magnetic field.
Detailed General Description
The SS2309 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to
operate properly.
The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor ex-
ceeds the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that
is, a south pole of sufficient strength towards the branded surface of the device turns the device on. The device re-
mains on if the south pole is removed (B→0). This latching property defines the device as a magnetic memory.
When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference
in the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents
output oscillation near the switching point, and allows clean switching of the output even in the presence of exter-
nal mechanical vibration and electrical noise.
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means
magnetic fields with equivalent strength and opposite direction drive the output high and low.
Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output
state. The correct state is attained after the first excursion beyond BOP or BRP.
Output level
Output level
OUT = High
OUT = High
BHYS
BHYS
OUT = Low
OUT = Low
BRP
-15Gs typ
BOP
15Gs typ
BRP
-15Gs typ
BOP
15Gs typ
0mT
0mT
Flux density
Flux density
UA package - Latch characteristic
SE package - Latch characteristic
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V3.10 Nov 1, 2013
SECELECTRONICS [ SEC Electronics Inc. ]
