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SS2015EUA 参数 Datasheet PDF下载

SS2015EUA图片预览
型号: SS2015EUA
PDF下载: 下载PDF文件 查看货源
内容描述: [CMOS High Sensitivity Micropower Hall Latch]
分类和应用:
文件页数/大小: 6 页 / 194 K
品牌: SECELECTRONICS [ SEC Electronics Inc. ]
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SS2015  
CMOS High Sensitivity Micropower Hall Latch  
Magnetic Characteristics  
Operating Parameters: TA = 25°C, VDD =12V  
Parameter  
Symbol  
Min  
Type  
Max  
Units  
Operating Point  
Release Point  
Hysteresis  
BOP  
5
70  
-5  
Gs  
Gs  
Gs  
BRP  
-70  
BHYST  
80  
ESD Protection  
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7  
Limit Values  
Parameter  
Symbol  
Unit  
kV  
Notes  
Min  
Max  
ESD Voltage  
VESD  
±4  
Performance Characteristics  
Unique Features  
CMOS Hall IC Technology  
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,  
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique  
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be  
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.  
Installation Comments  
Consider temperature coefficients of Hall IC and magnetic, as well as air gap and life time variations. Observe  
temperature limits during wave soldering. Typical IR solder-reflow profile:  
No Rapid Heating and Cooling.  
Recommended Preheating for max. 2minutes at 150°C  
Recommended Reflowing for max. 5seconds at 240°C  
4
V3.10 Nov 1, 2013