SIOY3SV2
Current Sensors
Parameters Table
PARAMETERS
SYMBOL
UNIT
VALUE
CONDITIONS
Electrical data
Supply voltage(±5%)(1)
Current consumption
VC
IC
V
±15
±15
mA
@ ± IPN, RL = 10 kΩ,
TA = 25°C
Output voltage
Vout
V
±4V
Isolation resistance
Output internal resistance
Load resistance(2)
RIS
ROUT
RL
MΩ
Ω
>1000
100
@ 500 VDC
KΩ
>10
Accuracy - Dynamic performance data
Linearity(3)(0…±IPN)
Accuracy
εL
% of IPN
% of IPN
mV
<±1
@ IPN, TA = 25°C
(excluding offset)
X
<±1
Electrical offset voltage
Hysteresis offset voltage
VOE
<±20
@TA = 25°C
@ IP= 0
VOH
mV
mV/K
%/K
<±10
<1
after an excursion of 1* IPN
Temperature coefficient of VOE
Temperature coefficient of
VOUT
TCVOE
TCVOUT
<±0.1
Response time
tr
μS
<5
@ 90% of IPN step
@-3dB
Frequency bandwidth(4)
BW
kHz
DC~25
General data
Ambient operating temperature
Ambient storage temperature
Mass
TA
TS
m
°C
°C
g
-40 ~ +85
-40 ~ +105
300
Isolation characteristics
Rated isolation voltage rms
Rms voltage for AC isolation
test
Vb
V
1000
3
Vd
KV
50 Hz, 1 min
Group IIIa
Creepage distance
dCp
dCI
CTI
mm
mm
>11
>11
275
Clearance distance
Comparative Tracking Index
Notes:
1) Operating at ±12V ≤VC<±15V will reduce the measuring range.
2) If the customer uses 10KΩ of the load resistor, the primary current has to be limited as the
nominal.
3) Linearity data exclude the electrical offset.
4) Please refer to derating curves in the technical file to avoid excessive core heating at high
frequency.
2
V2.00 May 1, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
