SIOPSV1
Current Sensors
Parameters Table
VALUE
Typ.
PARAMETERS
SYMBOL UNIT
CONDITIONS
Min.
Electrical data
Max.
Supply voltage(±5%)
Current consumption
Isolation resistance
VC
IC
V
4.5
-
5
9.2
-
5.5
12
-
mA
MΩ
KΩ
KΩ
nF
@ TA = 25°C
@ 500 VDC
RIS
RL
RL
CL
4.7
4.7
4.7
-
-
-
@VOUT to VCC
@VOUT to GND
@VOUT to GND
Output Load Resistance
Output Load Capacitance
-
-
-
10
Vc /5 (2.5+0.2×Ip)@10A
Vc /5 (2.5+0.1333×Ip)@15A
Vc /5 (2.5+0.1×Ip)@20A
Vc /5 (2.5+0.08×Ip)@25A
Vc /5 (2.5+0.0666×Ip)@30A
@TA = 25°C
Output voltage
Vout
V
Vcc=5V
Accuracy - Dynamic performance data
@TA = 25°C
Linearity
εL
X
X
% of IPN
% of IPN
% of IPN
<±1
<±2
Accuracy（IPN = 10...15A）
Accuracy（IPN = 20...30A）
@TA = 25°C
@TA = 25°C
<±1.5
@TA = 25°C
B=0
Quiescent Output Voltage(1)
VOUTQ
V
2.5±20mV
<±0.025
Sensitivity Temperature
Coefficient
TCSENS
%/°C
Output Resistance
ROUT
BW
tr
Ω
<1
<50
@-3dB
Output Bandwidth
Response time
kH
μS
>5 And <8
@ 90% of IPN
@AC 50Hz
1Min
Rms voltage isolation test
Vd
kV
<2
General data
Ambient operating temperature
Ambient storage temperature
Mass
TA
TS
m
-40 ~ +85
-40 ~ +105
300
°C
°C
g
Notes:
1) The indicated offset voltage is the one after the core hysteresis is removed.
2
V2.00 May 1, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
