SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
TIP2955
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-30mA ;IB=0
-60
IC=-4A ;IB=-0.4A
-1.1
-3.0
-1.5
-0.7
-1.0
-5.0
-5.0
70
V
-1
(sat)
IC=-10A ;IB=-3.3A
IC=-4A ; VCE=-4V
VCE=-30V; IB=0
V
VCE
-2
(sat)
VBE
V
ICEO
ICER
ICEV
IEBO
hFE-1
hFE-2
Is/b
mA
mA
mA
mA
VCE=-70Vdc;RBE=100Ohm
V
CE=-100Vdc,VBE(off)=-1.5Vdc
VEB=-7V; IC=0
DC current gain
IC=-4A ; VCE=-4V
IC=-10A ; VCE=-4V
20
5.0
3.0
2.5
DC current gain
Second breakdown collector current VCE=-30Vdc,t=1.0s,
with base forward biased
A
Nonrepetitive
fT
Transition frequency
IC=-0.5A ; VCE=-10V
MHz
2