SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ4033/4034/4035
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
MJ4033
MJ4034
MJ4035
Collector-emitter
sustaining voltage
IC=0.1A ;IB=0
80
V
100
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=10A; IB=40mA
IC=16A; IB=80mA
IC=10A ; VCE=3V
VCE=30V; IB=0
VCE=40V; IB=0
VCE=50V; IB=0
VEB=5V; IC=0
2.5
4.0
3.0
V
V
V
-1
(sat)
VCE
-2
(sat)
VBE
ICEO
Collector cut-off current
3.0
5.0
mA
mA
IEBO
Emitter cut-off current
DC current gain
hFE
IC=10A ; VCE=3V
1000
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction to case
1.17
ꢀ/W
Rth j-c
2