SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX37
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat
PARAMETER
CONDITIONS
MIN
400
7
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; IB=0
V
V
Emitter-base breakdown voltage
IE=50mA; IC=0
Collector-emitter saturation voltage IC=7 A;IB=0.07 A
Collector-emitter saturation voltage IC=10 A;IB=0.15A
1.5
2.0
V
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
IC=10 A;IB=0.15A
VCB=400V;IE=0
VCE=400V;IB=0
IC=8A ; VCE=5V
IC=15A ; VCE=5V
2.7
V
ICBO
0.1
mA
mA
ICEO
0.25
hFE-1
100
20
hFE-2
DC current gain
2