SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT11 BUT11A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP.
MAX
UNIT
BUT11
Collector-emitter
VCEO(SUS)
IC=0.1A; IB=0, L=25mH
V
sustaining voltage
BUT11A
BUT11
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
Collector-emitter
saturation voltage
VCEsat
1.5
1.3
V
V
BUT11A
BUT11
Base-emitter
VBEsat
saturation voltage
BUT11A
V
CE=Rated VCES ;VBE=0
1.0
2.0
ICES
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
Tj=125ꢀ
VEB=9V; IC=0
10
35
35
IC=5mA ; VCE=5V
IC=0.5A ; VCE=5V
10
10
DC current gain
Switching times resistive load
ton
ts
Turn-on time
Storage time
Fall time
1.0
4.0
0.8
µs
µs
µs
For BUT11
IC=3A ;IB1=- IB2=0.6A
For BUT11A
IC=2.5A; IB1=- IB2=0.5A
tf
Switching times inductive load
For BUT11
IC=3A ;IB=0.6A
ts
tf
Storage time
Fall time
1.4
µs
µs
For BUT11A
IC=2.5A ;IB =0.5A
0.15
2
SAVANTIC [ Savantic, Inc. ]
