SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2515AF
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VEBO
PARAMETER
CONDITIONS
MIN
700
7.5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ;IB=0
Emitter-base breakdown voltage
IE=1mA ;IC=0
13.5
V
VCEsat
VBEsat
ICES
Collector-emitter saturation voltage IC=4.5A ;IB=0.9A
5.0
1.0
V
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4.5A ;IB=0.9A
V
VCE=BVCES; VBE=0
Tj=125ꢀ
1.0
2.0
mA
mA
IEBO
VEB=7.5V; IC=0
IC=0.5A ; VCE=5V
IC=4.5A ; VCE=5V
1.0
hFE-1
17.2
hFE-2
DC current gain
5
10.8
2