SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX35
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICBO
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
0.9
UNIT
V
IC=5A; IB=0.5A
IC=7A; IB=0.7A
IC=5A; IB=0.5A
IC=7A; IB=0.7A
1.2
V
1.7
V
2.0
V
VCB=80V; IE=0
Tj=100ꢀ
0.1
10
µA
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
hFE
DC current gain
IC=0.5A ; VCE=10V
45
450
CC
Collector capacitance
IE=0;VCB=10V ;f=1MHz
IC=0.5A; VCE=5V ;f=100MHz
40
pF
fT
Transition frequency
100
MHz
Switching times
60
100
80
IC =1A;IB =-IBoff=0.1A
on
on
ton
Turn-on time
ns
ns
IC =2A;IB =-IBoff=0.2A
on
on
180
600
450
350
300
800
700
500
IC =5A;IB =-IBoff=0.5A
on
on
IC =1A;IB =-IBoff=0.1A
on
on
toff
turn-off time
IC =2A;IB =-IBoff=0.2A
on
on
IC =5A;IB =-IBoff=0.5A
on
on
2
SAVANTIC [ Savantic, Inc. ]
