SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=25mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=500V ;I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.5A ; V
CE
=5V
15
MIN
400
500
7
2SC3962
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
0.5
1.3
100
100
50
V
V
µA
µA
2
SAVANTIC [ Savantic, Inc. ]
