SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2921
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA ; IB=0
160
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A ;IB=0.5A
2.0
100
100
V
VCB=160V; IE=0
VEB=5V; IC=0
µA
µA
IEBO
hFE
IC=5A ; VCE=4V
IE=0 ; VCB=10V;f=1MHz
IE=-2A ; VCE=12V
50
Cob
Output capacitance
200
60
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.20
1.50
0.35
µs
µs
µs
IC=5A;RL=12Ω
IB1=-IB2=0.5A
VCC=60V
Storage time
Fall time
tf
ꢀ hFE classifications
O
P
Y
50-100
70-140
90-180
2