SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB871
I
C
=-10mA; I
B
=0
2SB871A
I
C
=-10A; I
B
=-0.33A
I
C
=-10A; I
B
=-0.33A
V
CB
=-40V; I
E
=0
CONDITIONS
SYMBOL
2SB871 2SB871A
MIN
-20
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-40
-0.6
-1.5
V
V
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SB871
2SB871A
I
CBO
Collector
cut-off current
-50
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V; f=1MHz
I
C
=-0.5A ; V
CE
=-10V
45
60
400
100
260
-50
µA
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
µA
pF
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ; I
B1
=-I
B2
=-0.1A
0.1
0.5
0.1
µs
µs
µs
h
FE-2
Classifications
R
60-120
Q
90-180
P
130-260
2
SAVANTIC [ Savantic, Inc. ]
