SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB747
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-2.0
-1.8
-50
UNIT
V
Collector-emitter saturation voltage IC=-3A; IB=-0.3A
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-3A ; VCE=-5V
VCB=-80V; IE=0
V
ICBO
µA
µA
IEBO
VEB=-3V; IC=0
-50
hFE-1
hFE-2
hFE-3
COB
IC=-20mA ; VCE=-5V
IC=-1A ; VCE=-5V
IC=-3A ; VCE=-5V
IE=0 ; VCB=-10V; f=1MHz
IC=-0.5A ; VCE=-5V
20
40
20
DC current gain
200
DC current gain
Output capacitance
Transition frequency
190
7
pF
fT
MHz
ꢀ hFE-2Classifications
R
Q
P
40-80
60-120
100-200
2
SAVANTIC [ Savantic, Inc. ]
