SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB743
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA; IB=0
-30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1.5A ;IB=-0.15A
IC=-1.5A ;IB=-0.15A
VCB=-40V; IE=0
-2.0
-2.0
-1
V
V
µA
µA
IEBO
VEB=-5V; IC=0
-1
hFE-1
IC=-20mA ; VCE=-5V
IC=-1A ; VCE=-5V
IC=-0.1A ; VCE=-5V
30
60
hFE-2
DC current gain
320
fT
Transition frequency
55
MHz
2