SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-1.0A; I
B
=-50mA
I
C
=-1.0A; I
B
=-50mA
V
CB
=-50V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-1V
I
C
=-10mA ; V
CE
=-2V
I
E
=0; f=1MHz ; V
CB
=-10V
135
40
MIN
2SB731
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
-0.5
-1.0
MAX
-0.6
-1.2
-0.1
-0.1
600
UNIT
V
V
µA
µA
75
25
MHz
pF
h
FE-1
Classifications
L
135-270
K
200-400
F
300-480
E
360-600
2
SAVANTIC [ Savantic, Inc. ]
