SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB676
DESCRIPTION
·With TO-220C package
·High DC Current Gain
:
h
FE
=2000 @V
CE
=-2V
,
I
C
=-1A (Min.)
·DARLINGTON
APPLICATIONS
·For switching applications
·Hammer drive, pulse motor drive applications
·Power amplifier applications
PINNING
PIN
1
2
3
Base
Collector; connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-80
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W