SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-0.1mA; I
E
=0
I
E
=-0.1mA; I
C
=0
I
C
=-0.3 A;I
B
=-30m A
I
C
=-0.3A ; V
CE
=-4V
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.3A ; V
CE
=-5V
I
C
=-0.3A ; V
CE
=-5V
40
40
MIN
-160
-160
-5
2SB628
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.0
-1
-1
200
V
V
µA
µA
MHz
2