SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-3A ;I
B
=-0.3A
I
C
=-1A;V
CE
=-5V
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0;f=1MHz;V
CB
=-10V
50
11
140
MIN
-100
-100
-5
TYP.
2SB616
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
f
T
C
OB
MAX
UNIT
V
V
V
-1.5
-1.5
-0.1
-0.1
V
V
mA
mA
MHz
pF
2
SAVANTIC [ Savantic, Inc. ]
