SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2SB600
SYMBOL
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-200
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ;I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-10A; I
B
=-1A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-10A; I
B
=-1A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-200V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-2A ; V
CE
=-5V
20
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-10V
4
MHz
2
SAVANTIC [ Savantic, Inc. ]
