SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-3A; I
B
=-0.3A
V
CB
=-100V; I
E
=0
MIN
-100
-100
-6
2SB558
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
TYP.
MAX
UNIT
V
V
V
-1.5
V
Collector cut-off current
-0.1
mA
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
40
7
-0.1
140
mA
MHz
h
FE
Classifications
R
40-80
O
70-140
2
SAVANTIC [ Savantic, Inc. ]
