SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-0.5mA; I
E
=0
I
E
=-0.5mA; I
B
=0
I
C
=-500m A;I
B
=-50m A
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.4A ; V
CE
=-10V
I
C
=-0.4A ; V
CE
=-10V
40
5
MIN
-150
-200
-5
2SB546
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-50
-50
240
V
µA
µA
MHz
h
FE
classifications
R
40-80
O
70-140
Y
120-240
2
SAVANTIC [ Savantic, Inc. ]
