SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ,I
B
=0
I
C
=-1mA ,I
E
=0
I
E
=-1mA ,I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-2A; I
B
=-0.2A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-10V
60
3
MIN
-60
-60
-6
TYP.
2SB512
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
MAX
UNIT
V
V
V
-1.0
-1.5
-1.0
-1.0
320
V
V
µA
µA
MHz
2
SAVANTIC [ Savantic, Inc. ]
