SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SB511
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
-35
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-1.5A; I
B
=-0.15A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-1A ; V
CE
=-5V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-2V
40
320
h
FE-2
DC current gain
I
C
=-0.1A ; V
CE
=-2V
35
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
8
MHz
h
FE-1
Classifications
C
40-80
D
60-120
E
100-200
F
160-320
2
SAVANTIC [ Savantic, Inc. ]
