SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SB1658
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
I
C
=-1A; I
B
=-50mA
I
C
=-2A; I
B
=-100mA
I
C
=-4A; I
B
=-200mA
I
C
=-1A; I
B
=-100mA
V
CB
=-30V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-50mA ; V
CE
=-10V
I
E
=0;f=1MHz ; V
CB
=-10V
-30
V
Collector-emitter saturation voltage
-0.15
V
Collector-emitter saturation voltage
-0.25
V
Collector-emitter saturation voltage
-0.5
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-0.1
µA
Emitter cut-off current
-0.1
µA
DC current gain
150
600
DC current gain
50
Transition frequency
95
MHz
Collector output capacitance
100
pF
2
SAVANTIC [ Savantic, Inc. ]
