SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1625
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA; IB=0
-110
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-5 A;IB=-5m A
IC=-5 A;IB=-5m A
VCB=-110V; IE=0
VEB=-5V; IC=0
-2.5
-3.0
V
V
-100
-100
µA
µA
IEBO
hFE
IC=-5A ; VCE=-4V
IC=0.5A ; VCE=-12V
IE=0; VCB=-10V;f=1MHz
5000
fT
Transition frequency
100
110
MHz
pF
COB
Output capacitance
Switching times
ton Turn-on time
ts
1.1
3.2
1.1
µs
µs
µs
IC=-5A;RL=6Ω
IB1=-IB2=-5mA
VCC=-30V
Storage time
Fall time
tf
ꢀ hFE classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
SAVANTIC [ Savantic, Inc. ]
