SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1550
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
-80
-80
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA, IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-0.1mA, IE=0
IE=-2mA, IC=0
V
V
IC=-5A ,IB=-20mA
IC=-5A ,IB=-20mA
VCB=-80V, IE=0
VEB=-5V, IC=0
-2.0
-2.5
-10
V
V
ICBO
µA
mA
IEBO
Emitter cut-off current
-2
hFE
DC current gain
IC=-5A ; VCE=-3V
1000
20000
2
SAVANTIC [ Savantic, Inc. ]
