SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SB1567
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-5mA; I
B
=0
-100
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-50µA; I
E
=0
-100
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-1A ; I
B
=-1mA
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-100V;I
E
=0
-10
µA
I
EBO
Emitter cut-off current
V
EB
=-7V;I
C
=0
-3.0
mA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-2V
1000
10000
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
35
pF
2