SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-6A ;I
B
=-6mA
I
C
=-6A ;I
B
=-6mA
V
CB
=-160V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-6A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=1A ; V
CE
=-12V
5000
MIN
-150
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
2SB1559
TYP.
MAX
UNIT
V
-2.5
-3.0
-100
-100
V
V
µA
µA
160
65
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-6A;R
L
=10C
I
B1
=- I
B2
=-6mA
V
CC
=60V
0.7
3.6
0.9
µs
µs
µs
h
FE
Classifications
O
5000-12000
P
6500-20000
Y
15000-30000
2
SAVANTIC [ Savantic, Inc. ]
