SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ;R
BE
=<
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-6A ;I
B
=-0.3A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-50
-60
-6
2SB1508
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
-0.5
-100
-100
280
V
µA
µA
10
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A; I
B1
=-I
B2
=-0.5A
R
L
=4B;V
CC
C20V
0.2
0.4
0.1
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
SAVANTIC [ Savantic, Inc. ]
