SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-1.5A ; I
B
=-1.5mA
I
C
=-1.5A ; I
B
=-1.5mA
V
CB
=-100V;I
E
=0
V
EB
=-8V;I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-2A ; V
CE
=-2V
2000
2000
MIN
-100
2SB1495
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
-1.5
-2.0
-10
-4.0
V
V
µA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-1.5mA
V
CC
?-30V
,R
L
=20A
0.5
1.0
0.4
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
