SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1389
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
Diode forward voltage
CONDITIONS
I
C
=-25mA; R
BE
=?
I
C
=-100µA; I
E
=0
I
E
=-50mA; I
C
=0
I
C
=-2A ;I
B
=-4mA
I
C
=-4A ;I
B
=-40mA
I
C
=-2A ;I
B
=-4mA
I
C
=-4A ;I
B
=-40mA
V
CB
=-50V; I
E
=0
V
CE
=-50V; R
BE
=?
I
C
=-2A ; V
CE
=-3V
I
D
=4A
1000
MIN
-60
-60
-7
-1.5
-3.0
-2.0
-3.5
-10
-10
20000
3.0
V
TYP.
MAX
UNIT
V
V
V
V
V
V
V
µA
µA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
V
D
2
SAVANTIC [ Savantic, Inc. ]
