SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-8A ;I
B
=-0.8A
I
C
=-8A ; V
CE
=-5V
V
CB
=-160V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-8A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V;f=1MHz
I
E
=0;f=1MHz;V
CB
=-10V
20
60
20
MIN
2SB1347
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
TYP.
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
µA
µA
200
15
400
MHz
pF
h
FE-2
classifications
Q
60-120
S
80-160
P
100-200
2
SAVANTIC [ Savantic, Inc. ]
