SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA; I
B
=0
I
C
=-50µA; I
E
=0
I
E
=-50µA; I
C
=0
I
C
=-4A; I
B
=-0.4A
I
C
=-4A; I
B
=-0.4A
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V; f=1MHz
I
C
=-0.5A ; V
CE
=-5V
100
MIN
-80
-80
-5
2SB1289
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.5
-10
-10
320
200
12
V
V
µA
µA
pF
MHz
h
FE
Classifications
E
100-200
F
160-320
2
SAVANTIC [ Savantic, Inc. ]
