SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1225
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
IC=-5mA; IE=0
MIN
-70
-60
TYP.
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage IC=-50mA; RBE=∞
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=-5A ; IB=-10mA
IC=-5A ; IB=-10mA
VCB=-40V;IE=0
-1.0
-1.5
-2.0
-0.1
-3.0
V
V
mA
mA
IEBO
VEB=-5V;IC=0
hFE
DC current gain
IC=-5A ; VCE=-2V
2000
5000
Switching times
ton Turn-on time
ts
0.5
1.5
1.7
µs
µs
µs
IC=5A; IB1=0.01A
-IB2=0.01A
Storage time
Fall time
VCC=20V ,RL=4Ω
tf
2
SAVANTIC [ Savantic, Inc. ]
