SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1194
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
VCEO(SUS) Collector-emitter sustaining voltage
IC=-0.2A; RBE=∞
-100
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=-3A ;IB=-3mA
IC=-3A ;IB=-3mA
VCB=-100V; IE=0
VCE=-100V; IB=0
VEB=-7V; IC=0
-1.5
-2.0
V
V
-100
-100
-5
µA
µA
mA
ICEO
IEBO
hFE
DC current gain
IC=-3A ; VCE=-3V
1500
10000
Switching times
ton
tstg
tf
Turn-on time
3.0
5.0
3.0
µs
µs
µs
IC=-3A ;IB1=-IB2=-3mA
VCC=-50V
Storage time
Fall time
ꢀ hFE Classifications
Q
P
1500-6000
4000-10000
2
SAVANTIC [ Savantic, Inc. ]
