SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-5mA ,
B
=0
I
E
=-0.5mA ,I
C
=0
I
C
=-500mA; I
B
=-50mA
I
C
=-300mA ; V
CE
=-10V
V
CB
=-200V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-100mA ; V
CE
=-10V
I
C
=-300mA ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V,f=1MHz
I
C
=-100mA ; V
CE
=-10V
60
50
MIN
-150
-6
2SB1192
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
UNIT
V
V
-1.0
-1.0
-50
-50
240
V
V
µA
µA
35
20
pF
MHz
h
FE-1
Classifications
Q
60-140
P
100-240
2
SAVANTIC [ Savantic, Inc. ]
