SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-30mA, I
B
=0
I
C
=-2A ,I
B
=-2mA
I
C
=-2A ,I
B
=-2mA
V
CB
=-100V, I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-2A , V
CE
=-5V
I
C
=-5A , V
CE
=-5V
2000
500
MIN
-100
2SB1087
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
-1.5
-2.0
1
-3
20000
V
V
µA
mA
2