SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SB1086
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
Collector-emitter breakdown voltage
I
C
=-1mA ;I
B
=0
I
C
=-50µA ;I
E
=0
I
E
=-50µA ;I
C
=0
I
C
=-1.0A ;I
B
=-0.1A
I
C
=-1.0A ;I
B
=-0.1A
V
CB
=-100V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
-120
V
Collector-base breakdown voltage
-120
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-2.0
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-1.0
µA
Emitter cut-off current
-1.0
µA
DC current gain
56
390
Transition frequency
50
MHz
Output capacitance
30
pF
2
SAVANTIC [ Savantic, Inc. ]
