SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1085
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-120
-120
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-1mA ,IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-50µA ,IE=0
V
IE=-50µA ,IC=0
V
IC=-1A; IB=-0.1A
IC=-1A; IB=-0.1A
VCB=-100V; IE=0
VEB=-4V; IC=0
-2.0
-1.5
-1.0
-1.0
320
V
V
µA
µA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-0.1A ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.1A ; VCE=-5V
60
COB
Output capacitance
30
50
pF
fT
Transition frequency
MHz
ꢀ hFE classifications
D
E
F
60-120
100-200 160-320
2