SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1016
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-4A; V
CE
=-5V
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-4A ; V
CE
=-5V
I
C
=-1A; V
CE
=-5V
f=1MHz ; V
CB
=-10V;I
E
=0
40
20
5
270
MHz
pF
MIN
-100
-2.0
-1.5
-100
-1
240
TYP.
MAX
UNIT
V
V
V
µA
mA
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
h
FE-1
Classifications
R
40-80
O
70-140
Y
120-240
2
SAVANTIC [ Savantic, Inc. ]
