SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SA980
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA981
2SA982
V
CEsat
Collector-emitter saturation voltage
2SA980
I
CBO
Collector cut-off current
2SA981
2SA982
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=-3A; I
B
=-0.3A
V
CB
=-100V; I
E
=0
V
CB
=-120V; I
E
=0
V
CB
=-140V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
I
C
=-50mA ;I
B
=0
CONDITIONS
2SA980/981/982
SYMBOL
MIN
-100
-120
-140
TYP.
MAX
UNIT
V
-1.5
V
-0.1
mA
-0.1
30
20
mA
MHz
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=-3A;R
L
=4A
I
B1
=-0.2A; I
B2
=0.1A
V
CC
=-12V
0.85
2.0
0.3
µs
µs
µs
2